3-221 semiconductor june 1998 features ? 55a, -60v, r ds(on) = 0.029 w ? total dose - meets pre-rad speci?cations to 100k rad (si) ? single event - safe operating area curve for single event effects - see immunity for let of 36mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 10v off-bias ? dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i dm ? photo current - 6.0na per-rad(si)/s typically ? neutron - maintain pre-rad speci?cations for 3e13 neutrons/cm 2 - usable to 3e14 neutrons/cm 2 formerly available as type ta17750. description the discrete products operation of harris semiconductor has developed a series of radiation hardened mosfets speci?cally designed for commercial and military space applications. enhanced power mosfet immunity to single event effects (see), single event gate rupture (segr) in particular, is combined with 100k rads of total dose hard- ness to provide devices which are ideally suited to harsh space environments. the dose rate and neutron tolerance necessary for military applications have not been sacri?ced. the harris portfolio of segr resistant radiation hardened mosfets includes n-channel and p-channel devices in a variety of voltage, current and on-resistance ratings. numerous packaging options are also available. this mosfet is an enhancement-mode silicon-gate power ?eld-effect transistor of the vertical dmos (vdmos) struc- ture. it is specially designed and processed to be radiation tolerant. the mosfet is well suited for applications exposed to radiation environments such as switching regula- tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. this type can be operated directly from integrated circuits. reliability screening is available as either commercial, txv equivalent of mil-s-19500, or space equivalent of mil-s-19500. contact harris semiconductor for any desired deviations from the data sheet. symbol package to-254aa ordering information rad level screening level part number/brand 10k commercial fsj9055d1 10k txv fsj9055d3 100k commercial fsj9055r1 100k txv fsj9055r3 100k space fsj9055r4 g d s caution: beryllia warning per mil-s-19500 refer to package speci?cations. s g d caution: these devices are sensitive to electrostatic discharge. users should follow proper ic handling procedures. copyright ? harris corporation 1998 file number 4415.1 fsj9055d, fsj9055r 55a, -60v, 0.029 ohm, rad hard, segr resistant, p-channel power mosfets
3-222 absolute maximum ratings t c = 25 o c, unless otherwise speci?ed fsj9055d, fsj9055r units drain to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v ds -60 v drain to gate voltage (r gs = 20k w ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dgr -60 v continuous drain current t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 55 a t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 35 a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 165 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gs 20 v maximum power dissipation t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 125 w t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 50 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 w/ o c single pulsed avalanche current, l = 100 m h, (see test figure). . . . . . . . . . . . . . . . . . . . . . i as 165 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i s 55 a pulsed source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i sm 165 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c lead temperature (during soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l (distance >0.063in (1.6mm) from case, 10s max) 300 o c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not im plied. electrical speci?cations t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 1ma, v gs = 0v 60 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 1ma t c = -55 o c - - -7.0 v t c = 25 o c -2.0 - -6.0 v t c = 125 o c -1.0 - - v zero gate voltage drain current i dss v ds = -48v, v gs = 0v t c = 25 o c--25 m a t c = 125 o c - - 250 m a gate to source leakage current i gss v gs = 20v t c = 25 o c - - 100 na t c = 125 o c - - 200 na drain to source on-state voltage v ds(on) v gs = -12v, i d = 55a - - -1.75 v drain to source on resistance r ds(on)12 i d = 35a, v gs = -12v t c = 25 o c - 0.020 0.029 w t c = 125 o c - - 0.044 w turn-on delay time t d(on) v dd = -30v, i d = 55a, r l = 0.55 w , v gs = -12v, r gs = 2.35 w - - 55 ns rise time t r - - 90 ns turn-off delay time t d(off) - - 80 ns fall time t f - - 35 ns total gate charge q g(tot) v gs = 0v to -20v v dd = -30v, i d = 55a - - 250 nc gate charge at 12v q g(12) v gs = 0v to -12v - 130 160 nc threshold gate charge q g(th) v gs = 0v to -2v - - 16 nc gate charge source q gs -3648nc gate charge drain q gd -4253nc plateau voltage v (plateau) i d = 55a, v ds = -15v - -6 - v input capacitance c iss v ds = -25v, v gs = 0v, f = 1mhz - 6300 - pf output capacitance c oss - 2250 - pf reverse transfer capacitance c rss - 300 - pf thermal resistance junction to case r q jc - - 0.83 o c/w thermal resistance junction to ambient r q ja --40 o c/w fsj9055d, fsj9055r
3-223 source to drain diode speci?cations parameter symbol test conditions min typ max units forward voltage v sd i sd = 55a -0.6 - -1.8 v reverse recovery time t rr i sd = 55a, di sd /dt = 100a/ m s - - 110 ns electrical speci?cations up to 100k rad t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions min max units drain to source breakdown volts (note 3) bv dss v gs = 0, i d = 1ma -60 - v gate to source threshold volts (note 3) v gs(th) v gs = v ds , i d = 1ma -2.0 -6.0 v gate to body leakage (notes 2, 3) i gss v gs = 20v, v ds = 0v - 100 na zero gate leakage (note 3) i dss v gs = 0, v ds = -48v - 25 m a drain to source on-state volts (notes 1, 3) v ds(on) v gs = -12v, i d = 55a - -1.75 v drain to source on resistance (notes 1, 3) r ds(on)12 v gs = -12v, i d = 35a - 0.029 w notes: 1. pulse test, 300 m s max. 2. absolute value. 3. insitu gamma bias must be sampled for both v gs = -12v, v ds = 0v and v gs = 0v, v ds = 80% bv dss . single event effects (seb, segr) (note 4) test symbol environment (note 5) applied v gs bias (v) (note 6) maximum v ds bias (v) ion species typical let (mev/mg/cm) typical range ( m ) single event effects safe operating area seesoa ni 26 43 20 -60 br 37 36 10 -60 br 37 36 15 -48 br 37 36 20 -36 br 60 31 0 -60 i 60 31 5 -48 i 60 31 10 -36 i 60 31 15 -24 i 60 31 20 -12 notes: 4. testing conducted at brookhaven national labs; sponsored by naval surface warfare center (nswc), crane, in. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. does not exhibit single event burnout (seb) or single event gate rupture (segr). typical performance curves unless otherwise speci?ed figure 1. single event effects safe operating area figure 2. drain inductance required to limit gamma dot current to i as let = 37mev/mg/cm 2 , range = 36 m let = 26mev/mg/cm 2 , range = 43 m let = 60mev/mg/cm 2 , range = 31 m -40 0 010 15 20 25 5 v gs (v) v ds (v) -10 -20 -30 -50 -60 -70 temp = 25 o c fluence = 1e5 ions/cm 2 (typical) -300 -100 -10 limiting inductance (henry) drain supply (v) -1000 ilm = 10a 300a 1e-4 1e-5 1e-6 -30 100a 30a 1e-7 1e-3 fsj9055d, fsj9055r
3-224 figure 3. maximum continuous drain current vs temperature figure 4. forward bias safe operating area figure 5. basic gate charge waveform figure 6. normalized r ds(on) vs junction temperature figure 7. normalized maximum transient thermal response typical performance curves unless otherwise speci?ed (continued) i d , drain (a) t c , case temperature ( o c) 150 100 50 0 -50 0 20 40 30 10 70 60 50 100 10 1 1 i d , drain current (a) v ds , drain to source voltage (v) 10 100 500 100 m s 1ms 10ms 100ms 200 t c = 25 o c operation in this area may be limited by r ds(on) charge q gd q g v g q gs -12v 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 t j , junction temperature ( o c) normalized r ds(on) pulse duration = 250ms, v gs = -12v, i d = 35a normalized thermal response (z q jc ) t, rectangular pulse duration (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -3 10 -2 10 -1 10 0 10 1 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z q jc + t c fsj9055d, fsj9055r
3-225 figure 8. unclamped inductive switching test circuits and waveforms figure 9. unclamped energy test circuit figure 10. unclamped energy waveforms figure 11. resistive switching test circuit figure 12. resistive switching waveforms typical performance curves unless otherwise speci?ed (continued) 100 10 0.1 1 t av , time in avalanche (ms) i as , avalanche current (a) 10 starting t j = 150 o c starting t j = 25 o c if r = 0 t av = (l) (i as ) / (1.3 rated bv dss - v dd ) t av = (l/r) ln [(i as *r) / (1.3 rated bv dss - v dd ) + 1] 500 if r 1 0 1 t p v gs 20v l + - v ds v dd dut vary t p to obtain required peak i as 0v 50 w 50 w 50v-150v i as + - electronic switch opens when i as is reached current transformer v dd v ds bv dss t p i as t av v dd r l v ds dut r gs 0v v gs = -12v t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on fsj9055d, fsj9055r
3-226 screening information screening is performed in accordance with the latest revision in effect of mil-s-19500, (screening information table). delta tests and limits (jantxv equivalent, jans equivalent) t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions max units gate to source leakage current i gss v gs = 20v 20 (note 7) na zero gate voltage drain current i dss v ds = 80% rated value 25 (note 7) m a drain to source on resistance r ds(on) t c = 25 o c at rated i d 20% (note 8) w gate threshold voltage v gs(th) i d = 1.0ma 20% (note 8) v notes: 7. or 100% of initial reading (whichever is greater). 8. of initial reading. screening information test jantxv equivalent jans equivalent gate stress v gs = -30v, t = 250 m sv gs = -30v, t = 250 m s pind optional required pre burn-in tests (note 9) mil-s-19500 group a, subgroup 2 (all static tests at 25 o c) mil-s-19500 group a, subgroup 2 (all static tests at 25 o c) steady state gate bias (gate stress) mil-std-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours mil-std-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours interim electrical tests (note 9) all delta parameters listed in the delta tests and limits table all delta parameters listed in the delta tests and limits table steady state reverse bias (drain stress) mil-std-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 160 hours mil-std-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 240 hours pda 10% 5% final electrical tests (note 9) mil-s-19500, group a, subgroup 2 mil-s-19500, group a, subgroups 2 and 3 note: 9. test limits are identical pre and post burn-in. additional screening tests parameter symbol test conditions max units safe operating area soa v ds = -48v, t = 10ms 11.0 a unclamped inductive switching i as v gs(peak) = -15v, l = 0.1mh 165 a thermal response d v sd t h = 100ms; v h = -25v; i h = 4a 110 mv thermal impedance d v sd t h = 500ms; v h = -25v; i h = 4a 190 mv fsj9055d, fsj9055r
3-227 rad hard data packages - harris power transistors txv equivalent 1. rad hard txv equivalent - standard data package a. certi?cate of compliance b. assembly flow chart c. preconditioning - attributes data sheet d. group a - attributes data sheet e. group b - attributes data sheet f. group c - attributes data sheet g. group d - attributes data sheet 2. rad hard txv equivalent - optional data package a. certi?cate of compliance b. assembly flow chart c. preconditioning - attributes data sheet - precondition lot traveler - pre and post burn-in read and record data d. group a - attributes data sheet - group a lot traveler e. group b - attributes data sheet - group b lot traveler - pre and post read and record data for intermittent operating life (subgroup b3) - bond strength data (subgroup b3) - pre and post high temperature operating life read and record data (subgroup b6) f. group c - attributes data sheet - group c lot traveler - pre and post read and record data for intermittent operating life (subgroup c6) - bond strength data (subgroup c6) g. group d - attributes data sheet - group d lot traveler - pre and post rad read and record data class s - equivalents 1. rad hard s equivalent - standard data package a. certi?cate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning attributes data sheet hi-rel lot traveler htrb - hi temp gate stress post reverse bias data and delta data htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. rad hard max. s equivalent - optional data package a. certi?cate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - hi-rel lot traveler - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - hi-rel lot traveler - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - hi-rel lot traveler - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - hi-rel lot traveler - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - hi-rel lot traveler - pre and post radiation data fsj9055d, fsj9055r
3-228 fsj9055d, fsj9055r to-254aa 3 lead jedec to-254aa hermetic metal package d l q h 1 e e 1 j 1 a 1 a e ?p ? b 0.065 r max. typ. 123 symbol inches millimeters notes min max min max a 0.249 0.260 6.33 6.60 - a 1 0.040 0.050 1.02 1.27 - ?b 0.035 0.045 0.89 1.14 2, 3 d 0.790 0.800 20.07 20.32 - e 0.535 0.545 13.59 13.84 - e 0.150 typ 3.81 typ 4 e 1 0.300 bsc 7.62 bsc 4 h 1 0.245 0.265 6.23 6.73 - j 1 0.140 0.160 3.56 4.06 4 l 0.520 0.560 13.21 14.22 - ?p 0.139 0.149 3.54 3.78 - q 0.110 0.130 2.80 3.30 - notes: 1. these dimensions are within allowable dimensions of rev. a of jedec outline to-254aa dated 11-86. 2. add typically 0.002 inches (0.05mm) for solder coating. 3. lead dimension (without solder). 4. position of lead to be measured 0.250 inches (6.35mm) from bot- tom of dimension d. 5. die to base beo isolated, terminals to case ceramic isolated. 6. controlling dimension: inch. 7. revision 1 dated 1-93. warning! beryllia warning per mil-s-19500 packages containing beryllium oxide (beo) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its compounds.
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